中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A silicon-on-insulator-based thermo-optic waveguide switch with low insertion loss and fast response

文献类型:期刊论文

作者Li YP ; Yu JZ ; Chen SW
刊名chinese physics letters
出版日期2005
卷号22期号:6页码:1449-1451
ISSN号0256-307x
关键词LOW-POWER CONSUMPTION
通讯作者li, yp, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: liyp@red.semi.ac.cn
中文摘要a silicon-on-insulator-based thermo-optic waveguide switch integrated with spot size converters is designed and fabricated by inductively coupled plasma reactive ion etching. the device shows good characteristics, including low, insertion loss of 8 +/- 1 db for wavelength 1530-1580 nm and fast response times of 4.6 as for rising edge and 1.9 mu s for failing edge. the extinction ratios of the two channels are 19.1 and 18 db, respectively.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-03-17
源URL[http://ir.semi.ac.cn/handle/172111/8680]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Li YP,Yu JZ,Chen SW. A silicon-on-insulator-based thermo-optic waveguide switch with low insertion loss and fast response[J]. chinese physics letters,2005,22(6):1449-1451.
APA Li YP,Yu JZ,&Chen SW.(2005).A silicon-on-insulator-based thermo-optic waveguide switch with low insertion loss and fast response.chinese physics letters,22(6),1449-1451.
MLA Li YP,et al."A silicon-on-insulator-based thermo-optic waveguide switch with low insertion loss and fast response".chinese physics letters 22.6(2005):1449-1451.

入库方式: OAI收割

来源:半导体研究所

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