Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition
文献类型：期刊论文
| 作者 | Chen CL ; Chen NF ; Liu LF ; Wu JL ; Liu ZK ; Yang SY ; Chai CL |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2005 |
| 卷号 | 279期号:3-4页码:272-275 |
| 关键词 | X-ray diffraction |
| ISSN号 | 0022-0248 |
| 通讯作者 | chen, cl, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: clchen@red.semi.ac.cn |
| 中文摘要 | the ga1-xmnxsb samples were fabricated by the implantation of mn ions into gasb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. auger electron spectroscopy depth profile of the ga1-xmnxsb samples showed that the mn ions were successfully implanted into gasb substrate. clear double-crystal x-ray diffraction patterns of the ga1-xmnxsb samples indicate that the ga1-xmnxsb epilayers have the zinc-blende structure without detectable second phase. magnetic hysteresis-loop of the ga1-xmnxsb epilayers were obtained at room temperature (293 k) with alternating gradient magnetometry. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8686]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen CL,Chen NF,Liu LF,et al. Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition[J]. journal of crystal growth,2005,279(3-4):272-275. |
| APA | Chen CL.,Chen NF.,Liu LF.,Wu JL.,Liu ZK.,...&Chai CL.(2005).Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition.journal of crystal growth,279(3-4),272-275. |
| MLA | Chen CL,et al."Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition".journal of crystal growth 279.3-4(2005):272-275. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。