Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate
文献类型：期刊论文
| 作者 | Zhao Q ; Zhang HZ ; Xu XY ; Wang Z ; Xu J ; Yu DP ; Li GH ; Su FH |
| 刊名 | applied physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 86期号:19页码:art.no.193101 |
| 关键词 | FIELD-EMISSION PROPERTIES |
| ISSN号 | 0003-6951 |
| 通讯作者 | yu, dp, peking univ, sch phys, electron microscopy lab, beijing 100871, peoples r china. 电子邮箱地址: yudp@pku.edu.cn |
| 中文摘要 | highly ordered aln nanowire arrays were synthesized via a simple physical vapor deposition method on sapphire substrate. the nanowires have an extremely sharp tip < 10 nm, with the average length around 3 mu m. raman spectroscopy analysis on the aln nanowire arrays revealed that the lifetime of the phonons is shorter than that in bulk aln. the transmission spectra of the aln nanowires showed a blueshift similar to 0.27 ev at the absorption edge with that of the bulk aln, which is closely related to the small size of the nanowires. (c) 2005 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8696]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao Q,Zhang HZ,Xu XY,et al. Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate[J]. applied physics letters,2005,86(19):art.no.193101. |
| APA | Zhao Q.,Zhang HZ.,Xu XY.,Wang Z.,Xu J.,...&Su FH.(2005).Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate.applied physics letters,86(19),art.no.193101. |
| MLA | Zhao Q,et al."Optical properties of highly ordered AlN nanowire arrays grown on sapphire substrate".applied physics letters 86.19(2005):art.no.193101. |
入库方式： OAI收割
来源：半导体研究所
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