Research progress of electronic properties of self-assembled semiconductor quantum dots
文献类型：期刊论文
| 作者 | Jin P
|
| 刊名 | acta metallurgica sinica
 |
| 出版日期 | 2005 |
| 卷号 | 41期号:5页码:463-470 |
| 关键词 | self-assembled semiconductor quantum dot |
| ISSN号 | 0412-1961 |
| 通讯作者 | sun, j, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: albertjefferson@sohu.com |
| 中文摘要 | self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-coulumb-blockade effect and nonlinear optical effect. due to its advantages of less crystal defects and relatively simpler fabrication technology, this material may be of important value in the research of future nanoelectronic device. in the order of vertical transport, lateral transport and charge storage, recent advances in the electronic properties of this material are brefly introduced, and the problems and perspectives are analyzed. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8704]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jin P. Research progress of electronic properties of self-assembled semiconductor quantum dots[J]. acta metallurgica sinica,2005,41(5):463-470. |
| APA | Jin P.(2005).Research progress of electronic properties of self-assembled semiconductor quantum dots.acta metallurgica sinica,41(5),463-470. |
| MLA | Jin P."Research progress of electronic properties of self-assembled semiconductor quantum dots".acta metallurgica sinica 41.5(2005):463-470. |
入库方式： OAI收割
来源：半导体研究所
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