A new type of photoelectric response in a double barrier structure with a wide quantum well
文献类型：期刊论文
| 作者 | Zhou X ; Zheng HZ |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 22期号:5页码:1222-1224 |
| 关键词 | QUASI-BOUND STATES |
| ISSN号 | 0256-307x |
| 通讯作者 | zhou, x, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zxia@red.semi.ac.cn |
| 中文摘要 | we have calculated the photoelectric response in a specially designed double barrier structure. it has been verilied that a transfer of the internal photovoltaic effect in the quantum well to the tunnelling transport through above-barrier quasibound states of the emitter barrier may give rise to a remarkable photocurrent. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8724]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou X,Zheng HZ. A new type of photoelectric response in a double barrier structure with a wide quantum well[J]. chinese physics letters,2005,22(5):1222-1224. |
| APA | Zhou X,&Zheng HZ.(2005).A new type of photoelectric response in a double barrier structure with a wide quantum well.chinese physics letters,22(5),1222-1224. |
| MLA | Zhou X,et al."A new type of photoelectric response in a double barrier structure with a wide quantum well".chinese physics letters 22.5(2005):1222-1224. |
入库方式： OAI收割
来源：半导体研究所
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