Sulfur-induced exciton localization in Te-rich ZnSTe alloy
文献类型：期刊论文
| 作者 | Yang, XD ; Xu, ZY ; Sun, Z ; Ji, Y ; Sun, BQ ; Sou, IK ; Ge, WK |
| 刊名 | applied physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 86期号:16页码:art.no.162108 |
| 关键词 | QUANTUM-WELLS |
| ISSN号 | 0003-6951 |
| 通讯作者 | yang, xd, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: zyxu@red.semi.ac.cn |
| 中文摘要 | exciton localization in te-rich znste epilayers has been studied by photoluminescence (pl) and time-resolved pl. the sulfur-related exciton emission is found to dominate the radiative recombination at low temperature and is shifted to the low energy with the increase of s concentration. by measuring the pl dependence on temperature and by analyzing the pl decay process, we have clarified the localization nature of the sulfur-related exciton emission. furthermore, the difference of the localization effect in te- and s-rich znste is also compared and discussed. © 2005 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8726]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang, XD,Xu, ZY,Sun, Z,et al. Sulfur-induced exciton localization in Te-rich ZnSTe alloy[J]. applied physics letters,2005,86(16):art.no.162108. |
| APA | Yang, XD.,Xu, ZY.,Sun, Z.,Ji, Y.,Sun, BQ.,...&Ge, WK.(2005).Sulfur-induced exciton localization in Te-rich ZnSTe alloy.applied physics letters,86(16),art.no.162108. |
| MLA | Yang, XD,et al."Sulfur-induced exciton localization in Te-rich ZnSTe alloy".applied physics letters 86.16(2005):art.no.162108. |
入库方式： OAI收割
来源：半导体研究所
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