中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optical properties of alloy states in GaNxAs1-x (x < 0.01)

文献类型:期刊论文

作者Luo XD ; Sun BH ; Xu ZY
刊名acta physica sinica
出版日期2005
卷号54期号:5页码:2385-2388
关键词GaNxAs1-x
ISSN号1000-3290
通讯作者luo, xd, nantong univ, sch sci, nantong 226007, peoples r china. 电子邮箱地址: luoxd00@yahoo.com.cn
中文摘要a set of ganxas1-x samples with a small content of nitrogen (n) (< 1%) were investigated by continuous-wave photoluminescence (pl), pulse-wave excitation pl, and photo reflectance technology. temperature-and excitation-dependence of pl disclosed the intrinsic band gap properties of alloy states in ganxas1-x, which was extremely different from the n-related impurity states. at the same time, pr spectra were also studied in this work.
学科主题半导体物理
收录类别SCI
语种中文
公开日期2010-03-17
源URL[http://ir.semi.ac.cn/handle/172111/8736]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Luo XD,Sun BH,Xu ZY. Optical properties of alloy states in GaNxAs1-x (x < 0.01)[J]. acta physica sinica,2005,54(5):2385-2388.
APA Luo XD,Sun BH,&Xu ZY.(2005).Optical properties of alloy states in GaNxAs1-x (x < 0.01).acta physica sinica,54(5),2385-2388.
MLA Luo XD,et al."Optical properties of alloy states in GaNxAs1-x (x < 0.01)".acta physica sinica 54.5(2005):2385-2388.

入库方式: OAI收割

来源:半导体研究所

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