中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A study on the realization of radio frequency energy AC/DC charge pump based on MOS FET

文献类型:期刊论文

作者Yuan Y ; Yin S
刊名acta physica sinica
出版日期2005
卷号54期号:5页码:2424-2428
关键词charge pump
ISSN号1000-3290
通讯作者yuan, y, chinese acad sci, inst semicond, artificial neural networks lab, beijing 100083, peoples r china. 电子邮箱地址: yyao@mail.semi.ac.cn
中文摘要this paper presents a novel efficient charge pump composed of low vth metal-oxide-semiconductor (mos) field effect transistors (fet) in the course of realizing radio frequency (rf) energy ac/dc conversion. the novel structure eliminates those defects caused by typical schottky-diode charge pumps, which are dependent on specific processes and inconsistent in quality between different product batches. our analyses indicate that an easy-fabricated, stable and efficient rf energy ac/dc charge pump can be conveniently implemented through reasonably configuring the mos transistor aspect ratio, and other design parameters such as capacitance, multiplying stages to meet various demands on performance.
学科主题微电子学
收录类别SCI
语种中文
公开日期2010-03-17
源URL[http://ir.semi.ac.cn/handle/172111/8738]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Yuan Y,Yin S. A study on the realization of radio frequency energy AC/DC charge pump based on MOS FET[J]. acta physica sinica,2005,54(5):2424-2428.
APA Yuan Y,&Yin S.(2005).A study on the realization of radio frequency energy AC/DC charge pump based on MOS FET.acta physica sinica,54(5),2424-2428.
MLA Yuan Y,et al."A study on the realization of radio frequency energy AC/DC charge pump based on MOS FET".acta physica sinica 54.5(2005):2424-2428.

入库方式: OAI收割

来源:半导体研究所

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