Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells
文献类型：期刊论文
| 作者 | Xu YQ
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2005 |
| 卷号 | 278期号:1-4页码:558-563 |
| 关键词 | bilayer quantum well |
| ISSN号 | 0022-0248 |
| 通讯作者 | niu, zc, chinese acad sci, inst semicond, natl lab superlattice & microstruct, beijing 100083, peoples r china. 电子邮箱地址: zcniu@red.semi.ac.cn |
| 中文摘要 | molecular beam epitaxy (mbe) growth of (inyga1-yas/gaas1-xsbx)/gaas bilayer quantum well (bqw) structures has been investigated. it is evidenced by photo luminescence (pl) that a strong blue shift of the pl peak energy of 47 mev with increasing pl excitation power from 0.63 to 20 mw was observed, indicating type ii band alignment of the bqw. the emission wavelength at room temperature from (inyga1-yas/gaas1-xsbx)/gaas bqw is longer (above 1.2 μ m) than that from ingaas/gaas and gaassb/gaas sqw structures (1.1 μ m range), while the emission efficiency from the bqw structures is comparable to that of the sqw. through optimizing growth conditions, we have obtained room temperature 1.31 μ m wavelength emission from the (inyga1-yas/gaas1-xsbx)/gaas bqw. our results have proved experimentally that the gaas-based bilayer (inyga1-yas/gaas1-xsbx)/gaas quantum well is a useful structure for the fabrication of near-infrared wavelength optoelectronic devices. © 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8746]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu YQ. Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells[J]. journal of crystal growth,2005,278(1-4):558-563. |
| APA | Xu YQ.(2005).Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells.journal of crystal growth,278(1-4),558-563. |
| MLA | Xu YQ."Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells".journal of crystal growth 278.1-4(2005):558-563. |
入库方式： OAI收割
来源：半导体研究所
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