The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer
文献类型：期刊论文
| 作者 | Shi, GX ; Xu, B ; Jin, P ; Ye, XL ; Cui, CX ; Zhang, CL ; Wu, J ; Wang, ZG |
| 刊名 | pricm 5: the fifth pacific rim international conference on advanced materials and processing
 |
| 出版日期 | 2005 |
| 卷号 | pts 1-5期号:475-479页码:1791-1794 |
| ISSN号 | 0255-5476 |
| 关键词 | quantum dots strain buffer layer InAs photoluminescence WELL LASER LAYER |
| 通讯作者 | shi, gx, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: gxshi@red.semi.ac.cn |
| 中文摘要 | the structural and photoluminescence (pl) properties of the inas quantum dots (qds) grown on a combined inalas and gaas strained buffer layer have been investigated by afm and pl measurements. the dependence of the critical thickness for the transition from 2d to 3d on the thickness of gaas layer is demonstrated directly by rheed. the effects of the introduced-inalas layer on the density and the aspect ratio of qds have been discussed. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8768]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Shi, GX,Xu, B,Jin, P,et al. The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer[J]. pricm 5: the fifth pacific rim international conference on advanced materials and processing,2005,pts 1-5(475-479):1791-1794. |
| APA | Shi, GX.,Xu, B.,Jin, P.,Ye, XL.,Cui, CX.,...&Wang, ZG.(2005).The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer.pricm 5: the fifth pacific rim international conference on advanced materials and processing,pts 1-5(475-479),1791-1794. |
| MLA | Shi, GX,et al."The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer".pricm 5: the fifth pacific rim international conference on advanced materials and processing pts 1-5.475-479(2005):1791-1794. |
入库方式： OAI收割
来源：半导体研究所
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