Polarized photoluminescence and temperature-dependent - Photoluminescence study of InAs quantum wires on InP(001)
文献类型:期刊论文
作者 | Ye XL![]() ![]() ![]() |
刊名 | pricm 5: the fifth pacific rim international conference on advanced materials and processing
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出版日期 | 2005 |
卷号 | pts 1-5期号:475-479页码:1897-1900 |
关键词 | polarized photoluminescence |
ISSN号 | 0255-5476 |
通讯作者 | lei, w, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. 电子邮箱地址: ahleiwen@red.semi.ac.cn |
中文摘要 | inas quantum wires (qwrs) have been fabricated on the inp(001), which has been evidenced by tem and polarized photoluminescence measurements (ppl). the monlayer-splitting peaks (msps) in the pl spectrum of inas qwrs can be clearly observed at low temperature measurements. supposing a peak-shift of msp identical to that of bulk material, we obtain the thermal activation energies of up to 5 msps. the smaller thermal activation energies for the msps of higher energy lead to the fast red-shift of pl peak as a whole. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-17 |
源URL | [http://ir.semi.ac.cn/handle/172111/8772] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Ye XL,Xu B,Jin P. Polarized photoluminescence and temperature-dependent - Photoluminescence study of InAs quantum wires on InP(001)[J]. pricm 5: the fifth pacific rim international conference on advanced materials and processing,2005,pts 1-5(475-479):1897-1900. |
APA | Ye XL,Xu B,&Jin P.(2005).Polarized photoluminescence and temperature-dependent - Photoluminescence study of InAs quantum wires on InP(001).pricm 5: the fifth pacific rim international conference on advanced materials and processing,pts 1-5(475-479),1897-1900. |
MLA | Ye XL,et al."Polarized photoluminescence and temperature-dependent - Photoluminescence study of InAs quantum wires on InP(001)".pricm 5: the fifth pacific rim international conference on advanced materials and processing pts 1-5.475-479(2005):1897-1900. |
入库方式: OAI收割
来源:半导体研究所
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