Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates
文献类型：期刊论文
| 作者 | Chen, Z ; Chua, SJ ; Han, PD ; Liu, XL ; Lu, DC ; Zhu, QS ; Wang, ZG ; Tripathy, S |
| 刊名 | physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2005 |
| 卷号 | 27期号:3页码:314-318 |
| 关键词 | GaN |
| ISSN号 | 1386-9477 |
| 通讯作者 | tripathy, s, inst mat res & engn, 3 res link, singapore 117602, singapore. 电子邮箱地址: tripathy-sudhiranjan@imre.a-star.edu.sg |
| 中文摘要 | in this study, we report comparative luminescence properties of multi-layer ingan quantum dots grown on c- and r-plane sapphire substrates by metal organic chemical vapor deposition (mocvd). high-density ingan quantum dots (qds) are formed on gan templates by decreasing the growth temperature and increasing the adatom hopping-barrier through surface passivation. atomic force microscopy (afm) has been employed to estimate the size and height of these dots. photoluminescence (pl) spectra recorded from (1120) ingan qds/(1102) sapphire show much stronger emission intensity compared to spectra recorded from (0001) ingan qds/(0001) sapphire. due to the absence of strong spontaneous polarization and piezoelectric field, such (1150) ingan qds in the active layers would lead to high efficiency light emitting devices. (c) 2005 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8794]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen, Z,Chua, SJ,Han, PD,et al. Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates[J]. physica e-low-dimensional systems & nanostructures,2005,27(3):314-318. |
| APA | Chen, Z.,Chua, SJ.,Han, PD.,Liu, XL.,Lu, DC.,...&Tripathy, S.(2005).Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates.physica e-low-dimensional systems & nanostructures,27(3),314-318. |
| MLA | Chen, Z,et al."Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates".physica e-low-dimensional systems & nanostructures 27.3(2005):314-318. |
入库方式： OAI收割
来源：半导体研究所
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