Growth and characterization of InN on sapphire substrate by RF-MBE
文献类型：期刊论文
| 作者 | Xiao, HL ; Wang, XL ; Wang, JX ; Zhang, NH ; Liu, HX ; Zeng, YP ; Li, JM ; Wang, ZG |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2005 |
| 卷号 | 276期号:3-4页码:401-406 |
| 关键词 | photoluminescence |
| ISSN号 | 0022-0248 |
| 通讯作者 | xiao, hl, chinese acad sci, inst semicond, novel mat grp, pob 912, beijing 100083, peoples r china. 电子邮箱地址: hlxiao@red.semi.ac.cn |
| 中文摘要 | indium nitride (inn) films were grown on sapphire substrates by radio-frequency plasma-excited molecular beam epitaxy (rf-mbe). atomic force microscopy (afm), reflection high-energy electron diffraction (rheed), double-crystal x-ray diffraction (dcxrd) and photoluminescence (pl) spectroscopy were used to characterize the inn films. the results show that the inn films have good crystallinity, with full-width at half-maximum (fwhm) of inn (0 0 0 2) dcxrd peak being 14 arcmin. at room temperature, a strong pl peak at 0.79ev was observed. at 1.9ev or so, no peak was observed. in addition, it is found that the inn films grown with low-temperature (lt) inn buffer layer are of better quality than those without lt-inn buffer layer. (c) 2004 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8798]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xiao, HL,Wang, XL,Wang, JX,et al. Growth and characterization of InN on sapphire substrate by RF-MBE[J]. journal of crystal growth,2005,276(3-4):401-406. |
| APA | Xiao, HL.,Wang, XL.,Wang, JX.,Zhang, NH.,Liu, HX.,...&Wang, ZG.(2005).Growth and characterization of InN on sapphire substrate by RF-MBE.journal of crystal growth,276(3-4),401-406. |
| MLA | Xiao, HL,et al."Growth and characterization of InN on sapphire substrate by RF-MBE".journal of crystal growth 276.3-4(2005):401-406. |
入库方式： OAI收割
来源：半导体研究所
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