In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure
文献类型：期刊论文
| 作者 | Han, YH ; Luo, JF ; Hao, AM ; Gao, CX ; Xie, HS ; Qu, SC ; Liu, HW ; Zou, GT |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 22期号:4页码:927-930 |
| 关键词 | SUPERCONDUCTIVITY |
| ISSN号 | 0256-307x |
| 通讯作者 | gao, cx, jilin univ, state key lab superhard mat, changchun 130012, peoples r china. 电子邮箱地址: cxgao599@yahoo.com.cn |
| 中文摘要 | an effective method is developed to fabricate metallic microcircuits in diamond anvil cell (dac) for resistivity measurement under high pressure. the resistivity of nanocrystal zns is measured under high pressure up to 36.4 gpa by using designed dac. the reversibility and hysteresis of the phase transition are observed. the experimental data is confirmed by an electric current field analysis accurately. the method used here can also be used under both ultrahigh pressure and high temperature conditions. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8802]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han, YH,Luo, JF,Hao, AM,et al. In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure[J]. chinese physics letters,2005,22(4):927-930. |
| APA | Han, YH.,Luo, JF.,Hao, AM.,Gao, CX.,Xie, HS.,...&Zou, GT.(2005).In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure.chinese physics letters,22(4),927-930. |
| MLA | Han, YH,et al."In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure".chinese physics letters 22.4(2005):927-930. |
入库方式： OAI收割
来源：半导体研究所
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