Rapid thermal annealing effects on structural and optical properties of self-assembled InAs/GaAs quantum dots capped by InAlAs/InGaAs layers
文献类型：期刊论文
| 作者 | Lu, W ; Li, DB ; Zhang, ZY ; Li, CR ; Zhang, Z ; Xu, B ; Wang, ZG |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 22期号:4页码:967-970 |
| 关键词 | MOLECULAR-BEAM EPITAXY |
| ISSN号 | 0256-307x |
| 通讯作者 | lu, w, chinese acad sci, inst phys, beijing lab electron microscopy, pob 603, beijing 100080, peoples r china. 电子邮箱地址: lw@blem.ac.cn |
| 中文摘要 | effects of rapid thermal annealing on the optical and structural properties of self-assembled inas/gaas quantum dots capped by the inalas/ingaas combination layers are studied by photoluminescence and transmission electron microscopy. the photoluminescence measurement shows that the photoluminescence peak of the sample after 850 degrees c rapid thermal annealing is blue shifted with 370mev and the excitation peak intensity increases by a factor of about 2.7 after the rapid thermal annealing, which indicates that the inas quantum dots have experienced an abnormal transformation during the annealing. the transmission electron microscopy shows that the quantum dots disappear and a new inalgaas single quantum well structure forms after the rapid thermal annealing treatment. the transformation mechanism is discussed. these abnormal optical properties are attributed to the structural transformation of these quantum dots into a single quantum well. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8804]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lu, W,Li, DB,Zhang, ZY,et al. Rapid thermal annealing effects on structural and optical properties of self-assembled InAs/GaAs quantum dots capped by InAlAs/InGaAs layers[J]. chinese physics letters,2005,22(4):967-970. |
| APA | Lu, W.,Li, DB.,Zhang, ZY.,Li, CR.,Zhang, Z.,...&Wang, ZG.(2005).Rapid thermal annealing effects on structural and optical properties of self-assembled InAs/GaAs quantum dots capped by InAlAs/InGaAs layers.chinese physics letters,22(4),967-970. |
| MLA | Lu, W,et al."Rapid thermal annealing effects on structural and optical properties of self-assembled InAs/GaAs quantum dots capped by InAlAs/InGaAs layers".chinese physics letters 22.4(2005):967-970. |
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来源：半导体研究所
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