Correlation between Er3+ emission and Si clusters in Erbium-doped a-SiOx : H films
文献类型：期刊论文
| 作者 | Chen CY ; Chen WD ; Song SF ; Xu ZJ ; Liao XB ; Li GH ; Bian LF ; Ding K |
| 刊名 | physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2005 |
| 卷号 | 27期号:1-2页码:21-25 |
| 关键词 | Si clusters |
| ISSN号 | 1386-9477 |
| 通讯作者 | chen, cy, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. |
| 中文摘要 | erbium-doped hydrogenated amorphous silicon suboxide films containing silicon clusters (a-siox:h) were prepared. the samples exhibited photoluminescence (pl) peaks at around 750nm and 1.54 mu m, which could be assigned to the electron-hole recombination in silicon clusters and the intra-4f transition in er3+, respectively. we compared annealing behaviors of si clusters and er3+ emission and found that si clusters emission depends strongly upon crystallinity of si clusters, whereas er3+ emission is not sensitive to whether it is si nanocrystals (nc-si) or amorphous si (a-si) clusters. the erbium-doped a-siox:h films containing either a-si clusters or nc-si have the same kind of er3+ -emitting centers. based on these results, it is concluded that a-si clusters can play the same role on er3+ excitation as nc-si. (c) 2004 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8828]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen CY,Chen WD,Song SF,et al. Correlation between Er3+ emission and Si clusters in Erbium-doped a-SiOx : H films[J]. physica e-low-dimensional systems & nanostructures,2005,27(1-2):21-25. |
| APA | Chen CY.,Chen WD.,Song SF.,Xu ZJ.,Liao XB.,...&Ding K.(2005).Correlation between Er3+ emission and Si clusters in Erbium-doped a-SiOx : H films.physica e-low-dimensional systems & nanostructures,27(1-2),21-25. |
| MLA | Chen CY,et al."Correlation between Er3+ emission and Si clusters in Erbium-doped a-SiOx : H films".physica e-low-dimensional systems & nanostructures 27.1-2(2005):21-25. |
入库方式： OAI收割
来源：半导体研究所
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