Ferromagnetism in Mn and Cr doped GaN by thermal diffusion
文献类型:期刊论文
作者 | Cai XM ; Djurisic AB ; Xie MH ; Liu H ; Zhang XX ; Zhu JJ ; Yang H |
刊名 | materials science and engineering b-solid state materials for advanced technology
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出版日期 | 2005 |
卷号 | 117期号:3页码:292-295 |
关键词 | GaN |
ISSN号 | 0921-5107 |
通讯作者 | cai, xm, univ hong kong, dept phys, hong kong, hong kong, peoples r china. 电子邮箱地址: caixm@hkusua.hku.hk |
中文摘要 | doping of magnetic element mn and cr in gan was achieved by thermal diffusion. the conductivity of the samples, which were all n-type, did not change significantly after the diffusion doping. x-ray diffraction measurements revealed no secondary phase in the samples. experiments using superconducting quantum interference device (squid) showed that the samples were ferromagnetic at 5 and 300 k, implying the curie temperature to be around or over 300 k, despite their n-type conductivity. (c) 2004 elsevier b.v. all rights reserved. |
学科主题 | 光电子学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-03-17 |
源URL | [http://ir.semi.ac.cn/handle/172111/8830] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Cai XM,Djurisic AB,Xie MH,et al. Ferromagnetism in Mn and Cr doped GaN by thermal diffusion[J]. materials science and engineering b-solid state materials for advanced technology,2005,117(3):292-295. |
APA | Cai XM.,Djurisic AB.,Xie MH.,Liu H.,Zhang XX.,...&Yang H.(2005).Ferromagnetism in Mn and Cr doped GaN by thermal diffusion.materials science and engineering b-solid state materials for advanced technology,117(3),292-295. |
MLA | Cai XM,et al."Ferromagnetism in Mn and Cr doped GaN by thermal diffusion".materials science and engineering b-solid state materials for advanced technology 117.3(2005):292-295. |
入库方式: OAI收割
来源:半导体研究所
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