中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Ferromagnetism in Mn and Cr doped GaN by thermal diffusion

文献类型:期刊论文

作者Cai XM ; Djurisic AB ; Xie MH ; Liu H ; Zhang XX ; Zhu JJ ; Yang H
刊名materials science and engineering b-solid state materials for advanced technology
出版日期2005
卷号117期号:3页码:292-295
关键词GaN
ISSN号0921-5107
通讯作者cai, xm, univ hong kong, dept phys, hong kong, hong kong, peoples r china. 电子邮箱地址: caixm@hkusua.hku.hk
中文摘要doping of magnetic element mn and cr in gan was achieved by thermal diffusion. the conductivity of the samples, which were all n-type, did not change significantly after the diffusion doping. x-ray diffraction measurements revealed no secondary phase in the samples. experiments using superconducting quantum interference device (squid) showed that the samples were ferromagnetic at 5 and 300 k, implying the curie temperature to be around or over 300 k, despite their n-type conductivity. (c) 2004 elsevier b.v. all rights reserved.
学科主题光电子学
收录类别SCI
语种英语
公开日期2010-03-17
源URL[http://ir.semi.ac.cn/handle/172111/8830]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Cai XM,Djurisic AB,Xie MH,et al. Ferromagnetism in Mn and Cr doped GaN by thermal diffusion[J]. materials science and engineering b-solid state materials for advanced technology,2005,117(3):292-295.
APA Cai XM.,Djurisic AB.,Xie MH.,Liu H.,Zhang XX.,...&Yang H.(2005).Ferromagnetism in Mn and Cr doped GaN by thermal diffusion.materials science and engineering b-solid state materials for advanced technology,117(3),292-295.
MLA Cai XM,et al."Ferromagnetism in Mn and Cr doped GaN by thermal diffusion".materials science and engineering b-solid state materials for advanced technology 117.3(2005):292-295.

入库方式: OAI收割

来源:半导体研究所

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