Effect of fabrication conditions on I-V properties for ZnO varistor with high concentration additives by sol-gel technique
文献类型：期刊论文
| 作者 | Zhang JC ; Cao SX ; Zhang RY ; Yu LM ; Jing C |
| 刊名 | current applied physics
 |
| 出版日期 | 2005 |
| 卷号 | 5期号:4页码:381-386 |
| 关键词 | ZnO nonlinear varistor |
| ISSN号 | 1567-1739 |
| 通讯作者 | zhang, jc, shanghai univ, ctr nanosci & technol, dept phys, shangda rd 99, shanghai 200436, peoples r china. 电子邮箱地址: jczhang@mail.shu.edu.cn |
| 中文摘要 | polycrystalline nano-grain-boundary multi-doping zno-based nonlinear varistors with higher concentration additives have been fabricated by sol-gel and standard solid-state reaction method, of which the best sample has a very high threshold voltage of e-b = 3300 v/mm. the effect of sintering processes, sintering temperature and sintering time, and that of additive concentration of bi2o3 on e-b of the samples are systematically investigated. the results show that the great merit of sol-gel method is its high threshold voltage obtained by a lower sintering temperature than the solid-state reaction method. the present work also shows that five phases including solid-state sintering, rich bi liquid phase formation and zno as well as other additive dissolution, zno grain growth, the secondary phase sufficient formation and evolution have been experienced at different sintering temperatures. the hole type defect and nonhomogeneity of the microstructure will lead to the decrease of threshold voltage, i.e., the grain size and the homogeneity of the material will be important factors and directly affect the characteristic of the varistor. the sintering characteristic and the influence of bi2o3 content on the threshold voltage are also discussed. (c) 2004 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8844]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang JC,Cao SX,Zhang RY,et al. Effect of fabrication conditions on I-V properties for ZnO varistor with high concentration additives by sol-gel technique[J]. current applied physics,2005,5(4):381-386. |
| APA | Zhang JC,Cao SX,Zhang RY,Yu LM,&Jing C.(2005).Effect of fabrication conditions on I-V properties for ZnO varistor with high concentration additives by sol-gel technique.current applied physics,5(4),381-386. |
| MLA | Zhang JC,et al."Effect of fabrication conditions on I-V properties for ZnO varistor with high concentration additives by sol-gel technique".current applied physics 5.4(2005):381-386. |
入库方式： OAI收割
来源：半导体研究所
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