Comparison of the properties of GaN grown on complex Si-based structures
文献类型：期刊论文
| 作者 | Zhou, SQ ; Vantomme, A ; Zhang, BS ; Yang, H ; Wu, MF |
| 刊名 | applied physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 86期号:8页码:art.no.081912 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION |
| ISSN号 | 0003-6951 |
| 通讯作者 | vantomme, a, katholieke univ leuven, inst voor kern stralingsfys, b-3001 heverlee, belgium. 电子邮箱地址: andre.vantomme@fys.kuleuven.ac.be |
| 中文摘要 | with the aim of investigating the possible integration of optoelectronic devices, epitaxial gan layers have been grown on si(ill) semiconductor-on-insulator (soi) and on si/cosi2/si(111) using metalorganic chemical vapor deposition. the samples are found to possess a highly oriented wurtzite structure, a uniform thickness, and abrupt interfaces. the epitaxial orientation is determined as gan(0001)//si(111), gan[1120]//si[110], and gan[1010]//si[112], and the gan layer is tensilely strained in the direction parallel to the interface. according to rutherford backscattering/channeling spectrometry and (0002) rocking curves, the crystalline quality of gan on si(111) soi is better than that of gan on silicide. room-temperature photoluminescence of gan/soi reveals a strong near-band-edge emission at 368 nm (3.37 ev) with a full width at half-maximum of 59 mev. (c) 2005 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8846]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhou, SQ,Vantomme, A,Zhang, BS,et al. Comparison of the properties of GaN grown on complex Si-based structures[J]. applied physics letters,2005,86(8):art.no.081912. |
| APA | Zhou, SQ,Vantomme, A,Zhang, BS,Yang, H,&Wu, MF.(2005).Comparison of the properties of GaN grown on complex Si-based structures.applied physics letters,86(8),art.no.081912. |
| MLA | Zhou, SQ,et al."Comparison of the properties of GaN grown on complex Si-based structures".applied physics letters 86.8(2005):art.no.081912. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。