中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions

文献类型:期刊论文

作者Sun, J ; Jin, P ; Wang, ZG ; Zhang, HZ ; Wang, ZY ; Hu, LZ
刊名thin solid films
出版日期2005
卷号476期号:1页码:68-72
关键词liquid phase epitaxy (LPE)
ISSN号0040-6090
通讯作者sun, j, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: albertjefferson@sohu.com
中文摘要illustrated in this paper are two examples of altering planar growth into self-assembled island formation by adapting experimental conditions. partial oxidation, undersaturated solution and high temperature change frank-van der merwe (fm) growth of al0.3ga0.7as in liquid phase epitaxy (lpe) into isolated island deposition. low growth speed, high temperature and in situ annealing in molecular beam epitaxy (mbe) cause the origination of inas/gaas quantum dots (qds) to happen while the film is still below critical thickness in stranski-krastanow (sk) mode. sample morphologies are characterized by scanning electron microscopy (sem) or atomic force microscopy (afm). it is suggested that such achievements are of value not only to fundamental researches but also to spheres of device applications as well. (c) 2004 elsevier b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-03-17
源URL[http://ir.semi.ac.cn/handle/172111/8848]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Sun, J,Jin, P,Wang, ZG,et al. Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions[J]. thin solid films,2005,476(1):68-72.
APA Sun, J,Jin, P,Wang, ZG,Zhang, HZ,Wang, ZY,&Hu, LZ.(2005).Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions.thin solid films,476(1),68-72.
MLA Sun, J,et al."Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions".thin solid films 476.1(2005):68-72.

入库方式: OAI收割

来源:半导体研究所

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