Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions
文献类型：期刊论文
| 作者 | Sun, J ; Jin, P ; Wang, ZG ; Zhang, HZ ; Wang, ZY ; Hu, LZ |
| 刊名 | thin solid films
 |
| 出版日期 | 2005 |
| 卷号 | 476期号:1页码:68-72 |
| 关键词 | liquid phase epitaxy (LPE) |
| ISSN号 | 0040-6090 |
| 通讯作者 | sun, j, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: albertjefferson@sohu.com |
| 中文摘要 | illustrated in this paper are two examples of altering planar growth into self-assembled island formation by adapting experimental conditions. partial oxidation, undersaturated solution and high temperature change frank-van der merwe (fm) growth of al0.3ga0.7as in liquid phase epitaxy (lpe) into isolated island deposition. low growth speed, high temperature and in situ annealing in molecular beam epitaxy (mbe) cause the origination of inas/gaas quantum dots (qds) to happen while the film is still below critical thickness in stranski-krastanow (sk) mode. sample morphologies are characterized by scanning electron microscopy (sem) or atomic force microscopy (afm). it is suggested that such achievements are of value not only to fundamental researches but also to spheres of device applications as well. (c) 2004 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8848]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Sun, J,Jin, P,Wang, ZG,et al. Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions[J]. thin solid films,2005,476(1):68-72. |
| APA | Sun, J,Jin, P,Wang, ZG,Zhang, HZ,Wang, ZY,&Hu, LZ.(2005).Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions.thin solid films,476(1),68-72. |
| MLA | Sun, J,et al."Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions".thin solid films 476.1(2005):68-72. |
入库方式： OAI收割
来源：半导体研究所
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