Demonstration of low-cost Si-based tunable long-wavelength resonant-cavity-enhanced photodetectors
文献类型：期刊论文
| 作者 | Mao RW ; Zuo YH ; Li CB ; Cheng BW ; Teng XG ; Luo LP ; Yu JZ ; Wang QM |
| 刊名 | applied physics letters
 |
| 出版日期 | 2005 |
| 卷号 | 86期号:3页码:art.no.033502 |
| 关键词 | QUANTUM-EFFICIENCY |
| ISSN号 | 0003-6951 |
| 通讯作者 | mao, rw, chinese acad sci, inst semicond, state key joint lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: maorongwei@red.semi.ac.cn |
| 中文摘要 | a simple process for fabricating low-cost si-based continuously tunable long-wavelength resonant-cavity-enhanced (rce) photodetectors has been investigated. high-contrast sio2/si(deltan similar to2) was employed as mirrors to eliminate the need to grow thick epitaxial distributed bragg reflectors. such high-reflectivity sio2/si mirrors were deposited on the as-grown ingaas epitaxy layers, and then were bonded to silicon substrates at a low temperature of 350 c without any special treatment on bonding surfaces, employing silicate gel as the bonding medium. the cost is thus decreased. a thermally tunable si-based ingaas rce photodetector operating at 1.3-1.6 mum was obtained, with a quantum efficiency of about 44% at the resonant wavelength of 1476 nm and a tuning range of 14.5 nm. it demonstrates a great potential for industry processes. (c) 2005 american institute of physics. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8874]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Mao RW,Zuo YH,Li CB,et al. Demonstration of low-cost Si-based tunable long-wavelength resonant-cavity-enhanced photodetectors[J]. applied physics letters,2005,86(3):art.no.033502. |
| APA | Mao RW.,Zuo YH.,Li CB.,Cheng BW.,Teng XG.,...&Wang QM.(2005).Demonstration of low-cost Si-based tunable long-wavelength resonant-cavity-enhanced photodetectors.applied physics letters,86(3),art.no.033502. |
| MLA | Mao RW,et al."Demonstration of low-cost Si-based tunable long-wavelength resonant-cavity-enhanced photodetectors".applied physics letters 86.3(2005):art.no.033502. |
入库方式： OAI收割
来源：半导体研究所
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