A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics
文献类型：期刊论文
| 作者 | Lü, Yuan-Jie ; Lin, Zhao-Jun ; Yu, Ying-Xia ; Meng, Ling-Guo ; Cao, Zhi-Fang ; Luan, Chong-Biao ; Wang, Zhan-Guo |
| 刊名 | chinese physics b
 |
| 出版日期 | 2012 |
| 卷号 | 21期号:9页码:16741056 |
| 学科主题 | 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2013-05-07 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23969]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Lü, Yuan-Jie,Lin, Zhao-Jun,Yu, Ying-Xia,et al. A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics[J]. chinese physics b,2012,21(9):16741056. |
| APA | Lü, Yuan-Jie.,Lin, Zhao-Jun.,Yu, Ying-Xia.,Meng, Ling-Guo.,Cao, Zhi-Fang.,...&Wang, Zhan-Guo.(2012).A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics.chinese physics b,21(9),16741056. |
| MLA | Lü, Yuan-Jie,et al."A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics".chinese physics b 21.9(2012):16741056. |
入库方式： OAI收割
来源：半导体研究所
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