中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates

文献类型:期刊论文

作者Li, Yanbo ; Zhang, Yang ; Zhang, Yuwei ; Wang, Baoqiang ; Zhu, Zhanping ; Zeng, Yiping
刊名applied surface science
出版日期2012
卷号258期号:17页码:6571-6575
学科主题半导体材料
收录类别EI
语种英语
公开日期2013-05-07
源URL[http://ir.semi.ac.cn/handle/172111/23982]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Li, Yanbo,Zhang, Yang,Zhang, Yuwei,et al. Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates[J]. applied surface science,2012,258(17):6571-6575.
APA Li, Yanbo,Zhang, Yang,Zhang, Yuwei,Wang, Baoqiang,Zhu, Zhanping,&Zeng, Yiping.(2012).Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates.applied surface science,258(17),6571-6575.
MLA Li, Yanbo,et al."Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates".applied surface science 258.17(2012):6571-6575.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。