Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors
文献类型：期刊论文
| 作者 | Ji, Dong ; Lu, Yanwu ; Liu, Bing ; Jin, Guangri ; Liu, Guipeng ; Zhu, Qinsheng ; Wang, Zhanguo |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2012 |
| 卷号 | 112页码:024515 |
| 学科主题 | 半导体材料 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2013-05-07 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24006]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Ji, Dong,Lu, Yanwu,Liu, Bing,et al. Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors[J]. journal of applied physics,2012,112:024515. |
| APA | Ji, Dong.,Lu, Yanwu.,Liu, Bing.,Jin, Guangri.,Liu, Guipeng.,...&Wang, Zhanguo.(2012).Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors.journal of applied physics,112,024515. |
| MLA | Ji, Dong,et al."Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors".journal of applied physics 112(2012):024515. |
入库方式： OAI收割
来源：半导体研究所
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