Optimization of the optical and electrical properties of GaN vertical light emitting diode with current block layer
文献类型：期刊论文
| ; | |
| 作者 | Lu, Na; Liu, Zhiqiang; Guo, Enqing; Wang, Liancheng; Melton, Andrew; Ferguson, Ian |
| 刊名 | materials research society symposium proceedings
 ; Materials Research Society Symposium Proceedings
|
| 出版日期 | 2012 ; 2012 |
| 卷号 | 1396页码:15-19 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2013-05-07 ; 2013-05-07 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24012]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Lu, Na,Liu, Zhiqiang,Guo, Enqing,et al. Optimization of the optical and electrical properties of GaN vertical light emitting diode with current block layer, Optimization of the optical and electrical properties of GaN vertical light emitting diode with current block layer[J]. materials research society symposium proceedings, Materials Research Society Symposium Proceedings,2012, 2012,1396, 1396:15-19, 15-19. |
| APA | Lu, Na,Liu, Zhiqiang,Guo, Enqing,Wang, Liancheng,Melton, Andrew,&Ferguson, Ian.(2012).Optimization of the optical and electrical properties of GaN vertical light emitting diode with current block layer.materials research society symposium proceedings,1396,15-19. |
| MLA | Lu, Na,et al."Optimization of the optical and electrical properties of GaN vertical light emitting diode with current block layer".materials research society symposium proceedings 1396(2012):15-19. |
入库方式： OAI收割
来源：半导体研究所
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