A systematic study of the thermoelectric properties of GaN-based wide band gap semiconductors
文献类型：期刊论文
| ; | |
| 作者 | Hurwitz, Elisa N; Kucukgok, Bahadir; Melton, Andrew G; Liu, ZhiQiang; Lu, Na; Ferguson, Ian T |
| 刊名 | materials research society symposium proceedings
 ; Materials Research Society Symposium Proceedings
|
| 出版日期 | 2012 ; 2012 |
| 卷号 | 1396页码:101-106 |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2013-05-13 ; 2013-05-13 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24072]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 推荐引用方式 GB/T 7714 | Hurwitz, Elisa N,Kucukgok, Bahadir,Melton, Andrew G,et al. A systematic study of the thermoelectric properties of GaN-based wide band gap semiconductors, A systematic study of the thermoelectric properties of GaN-based wide band gap semiconductors[J]. materials research society symposium proceedings, Materials Research Society Symposium Proceedings,2012, 2012,1396, 1396:101-106, 101-106. |
| APA | Hurwitz, Elisa N,Kucukgok, Bahadir,Melton, Andrew G,Liu, ZhiQiang,Lu, Na,&Ferguson, Ian T.(2012).A systematic study of the thermoelectric properties of GaN-based wide band gap semiconductors.materials research society symposium proceedings,1396,101-106. |
| MLA | Hurwitz, Elisa N,et al."A systematic study of the thermoelectric properties of GaN-based wide band gap semiconductors".materials research society symposium proceedings 1396(2012):101-106. |
入库方式： OAI收割
来源：半导体研究所
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