Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium
文献类型：期刊论文
| ; | |
| 作者 | He, W; Lu, S.L; Jiang, D.S; Dong, J.R; Tackeuchi, A; Yang, H |
| 刊名 | journal of applied physics
 ; Journal of Applied Physics
|
| 出版日期 | 2012 ; 2012 |
| 卷号 | 112期号:2页码:023509 |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | EI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2013-05-07 ; 2013-05-07 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23964]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | He, W,Lu, S.L,Jiang, D.S,et al. Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium, Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium[J]. journal of applied physics, Journal of Applied Physics,2012, 2012,112, 112(2):023509, 023509. |
| APA | He, W,Lu, S.L,Jiang, D.S,Dong, J.R,Tackeuchi, A,&Yang, H.(2012).Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium.journal of applied physics,112(2),023509. |
| MLA | He, W,et al."Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium".journal of applied physics 112.2(2012):023509. |
入库方式： OAI收割
来源：半导体研究所
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