Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing
文献类型：期刊论文
| 作者 | Hu, Shaoxu ; Han, Peide ; Wang, Shuai ; Mao, Xue ; Li, Xinyi ; Gao, Lipeng |
| 刊名 | physica status solidi (a) applications and materials science
 |
| 出版日期 | 2012 |
| 卷号 | 209期号:12页码:2521-2526 |
| 学科主题 | 光电子学 |
| 收录类别 | EI |
| 公开日期 | 2013-05-07 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23945]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Hu, Shaoxu,Han, Peide,Wang, Shuai,et al. Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing[J]. physica status solidi (a) applications and materials science,2012,209(12):2521-2526. |
| APA | Hu, Shaoxu,Han, Peide,Wang, Shuai,Mao, Xue,Li, Xinyi,&Gao, Lipeng.(2012).Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing.physica status solidi (a) applications and materials science,209(12),2521-2526. |
| MLA | Hu, Shaoxu,et al."Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing".physica status solidi (a) applications and materials science 209.12(2012):2521-2526. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。