Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer
文献类型：期刊论文
| 作者 | Han, Genquan ; Su, Shaojian ; Wang, Lanxiang ; Zhang, Zheng ; Xue, Chunlai ; Cheng, Buwen ; Yeo, Yee-Chia ; Wang, Wei ; Gong, Xiao ; Yang, Yue ; Ivana ; Guo, Pengfei ; Guo, Cheng ; Zhang, Guangze ; Pan, Jisheng |
| 刊名 | digest of technical papers - symposium on vlsi technology
 |
| 出版日期 | 2012 |
| 页码 | 97-98 |
| 学科主题 | 光电子学 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2013-05-07 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23957]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Han, Genquan,Su, Shaojian,Wang, Lanxiang,et al. Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer[J]. digest of technical papers - symposium on vlsi technology,2012:97-98. |
| APA | Han, Genquan.,Su, Shaojian.,Wang, Lanxiang.,Zhang, Zheng.,Xue, Chunlai.,...&Pan, Jisheng.(2012).Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer.digest of technical papers - symposium on vlsi technology,97-98. |
| MLA | Han, Genquan,et al."Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer".digest of technical papers - symposium on vlsi technology (2012):97-98. |
入库方式： OAI收割
来源：半导体研究所
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