Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
文献类型：期刊论文
| 作者 | Wang, Lanxiang ; Han, Genquan ; Su, Shaojian ; Cheng, Buwen ; Yeo, Yee-Chia ; Zhou, Qian ; Yang, Yue ; Guo, Pengfei ; Wang, Wei ; Tong, Yi ; Lim, Phyllis Shi Ya ; Xue, Chunlai ; Wang, Qiming |
| 刊名 | international symposium on vlsi technology, systems, and applications, proceedings
 |
| 出版日期 | 2012 |
| 页码 | 6210151 |
| 学科主题 | 光电子学 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2013-05-07 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/23993]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang, Lanxiang,Han, Genquan,Su, Shaojian,et al. Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor[J]. international symposium on vlsi technology, systems, and applications, proceedings,2012:6210151. |
| APA | Wang, Lanxiang.,Han, Genquan.,Su, Shaojian.,Cheng, Buwen.,Yeo, Yee-Chia.,...&Wang, Qiming.(2012).Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor.international symposium on vlsi technology, systems, and applications, proceedings,6210151. |
| MLA | Wang, Lanxiang,et al."Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor".international symposium on vlsi technology, systems, and applications, proceedings (2012):6210151. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。