Investigation of Mn-implanted n-Si by low-energy ion beam deposition
文献类型：期刊论文
| 作者 | Yin ZG
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2005 |
| 卷号 | 273期号:3-4页码:458-463 |
| 关键词 | auger electron spectroscopy |
| ISSN号 | 0022-0248 |
| 通讯作者 | liu, lf, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. 电子邮箱地址: lfliu@red.semi.ac.cn |
| 中文摘要 | mn ions were implanted to n-type si(0 0 1) single crystal by low-energy ion beam deposition technique with an energy of 1000 ev and a dose of 7.5 x 10(17) cm(-2). the samples were held at room temperature and at 300degreesc during implantation. auger electron spectroscopy depth profiles of samples indicate that the mn ions reach deeper in the sample implanted at 300degreesc than in the sample implanted at room temperature. x-ray diffraction measurements show that the structure of the sample implanted at room temperature is amorphous while that of the sample implanted at 300degreesc is crystallized. there are no new phases found except silicon both in the two samples. atomic force microscopy images of samples indicate that the sample implanted at 300degreesc has island-like humps that cover the sample surface while there is no such kind of characteristic in the sample implanted at room temperature. the magnetic properties of samples were investigated by alternating gradient magnetometer (agm). the sample implanted at 300degreesc shows ferromagnetic behavior at room temperature. (c) 2004 elsevier bn. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8902]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yin ZG. Investigation of Mn-implanted n-Si by low-energy ion beam deposition[J]. journal of crystal growth,2005,273(3-4):458-463. |
| APA | Yin ZG.(2005).Investigation of Mn-implanted n-Si by low-energy ion beam deposition.journal of crystal growth,273(3-4),458-463. |
| MLA | Yin ZG."Investigation of Mn-implanted n-Si by low-energy ion beam deposition".journal of crystal growth 273.3-4(2005):458-463. |
入库方式： OAI收割
来源：半导体研究所
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