Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature
文献类型：期刊论文
| 作者 | Liu, Zhi ; Cheng, Buwen ; Hu, Weixuan ; Su, Shaojian ; Li, Chuanbo ; Wang, Qiming |
| 刊名 | nanoscale research letters
 |
| 出版日期 | 2012 |
| 卷号 | 7页码:1-11 |
| 学科主题 | 光电子学 |
| 收录类别 | EI |
| 语种 | 英语 |
| 公开日期 | 2013-05-07 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/24033]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Liu, Zhi,Cheng, Buwen,Hu, Weixuan,et al. Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature[J]. nanoscale research letters,2012,7:1-11. |
| APA | Liu, Zhi,Cheng, Buwen,Hu, Weixuan,Su, Shaojian,Li, Chuanbo,&Wang, Qiming.(2012).Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature.nanoscale research letters,7,1-11. |
| MLA | Liu, Zhi,et al."Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature".nanoscale research letters 7(2012):1-11. |
入库方式： OAI收割
来源：半导体研究所
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