Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition
文献类型：期刊论文
| 作者 | Zeng XB ; Liao XB ; Bo W ; Diao HW ; Dai ST ; Xiang XB ; Chang XL ; Xu YY ; Hu ZH ; Hao HY ; Kong GL |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2004 |
| 卷号 | 53期号:12页码:4410-4413 |
| 关键词 | silicon nanowires |
| ISSN号 | 1000-3290 |
| 通讯作者 | zeng, xb, chinese acad sci, inst semicond, state key lab surface phys, beijing 100083, peoples r china. |
| 中文摘要 | boron-doped ( b-doped) silicon nanowires have been successfully synthesized by plasma-enhanced chemical vapor deposition (pecvd) at 440degreesc using silane as the si source, diborane( b2h6) as the dopant gas and an as the catalyst. it is desirable to extend this technique to the growth of silicon nanowire pn junctions because pecvd enables immense chemical reactivity. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8930]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zeng XB,Liao XB,Bo W,et al. Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition[J]. acta physica sinica,2004,53(12):4410-4413. |
| APA | Zeng XB.,Liao XB.,Bo W.,Diao HW.,Dai ST.,...&Kong GL.(2004).Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition.acta physica sinica,53(12),4410-4413. |
| MLA | Zeng XB,et al."Boron-doped silicon nanowires grown by plasma-enhanced chemical vapor deposition".acta physica sinica 53.12(2004):4410-4413. |
入库方式： OAI收割
来源：半导体研究所
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