Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine
文献类型：期刊论文
| 作者 | Wang LD ; Su ZS ; Wang C |
| 刊名 | applied physics letters
 |
| 出版日期 | 2012 |
| 卷号 | 100期号:21页码:文献号: 213303 |
| 关键词 | LIGHT-EMITTING DEVICES BISTABLE DEVICES THIN-FILM POLYMER PERFORMANCE INTERFACE INJECTION METAL |
| ISSN号 | 0003-6951 |
| 通讯作者 | wang ld |
| 中文摘要 | nonvolatile organic write-once-read-many-times memory device was demonstrated based on hexadecafluoro-copper-phthalocyanine (f16cupc) single layer sandwiched between indium tin oxide (ito) anode and al cathode. the as fabricated device remains in on state and it can be tuned to off state by applying a reverse bias. the on/off current ratio of the device can reach up to 2.3 x 10(3). simultaneously, the device shows long-term storage stability and long retention time in air. the on/off transition is attributed to the formation and destruction of the interfacial dipole layer in the ito/f16cupc interface, and such a mechanism is different from previously reported ones. (c) 2012 american institute of physics. [http://dx.doi.org/10.1063/1.4721518] |
| 收录类别 | SCI收录期刊论文 |
| 语种 | 英语 |
| WOS记录号 | WOS:000304489900070 |
| 公开日期 | 2013-05-20 |
| 源URL | [http://ir.ciac.jl.cn/handle/322003/48145]  |
| 专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang LD,Su ZS,Wang C. Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine[J]. applied physics letters,2012,100(21):文献号: 213303. |
| APA | Wang LD,Su ZS,&Wang C.(2012).Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine.applied physics letters,100(21),文献号: 213303. |
| MLA | Wang LD,et al."Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine".applied physics letters 100.21(2012):文献号: 213303. |
入库方式： OAI收割
来源：长春应用化学研究所
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