Device for charge- and spin-pumped current generation with temperature-induced enhancement
文献类型：期刊论文
| 作者 | Yang M ; Li SS |
| 刊名 | physical review b
 |
| 出版日期 | 2004 |
| 卷号 | 70期号:19页码:art.no.195341 |
| 关键词 | PHOTON SIDE-BAND |
| ISSN号 | 1098-0121 |
| 通讯作者 | li, ss, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: sslee@red.semi.ac.cn |
| 中文摘要 | we have proposed a device, a superconducting-lead/quantum-dot/normal-lead system with an ac voltage applied on the gate of the quantum dot induced by a microwave, based on the one-parameter pump mechanism. it can generate a pure charge- or spin-pumped current. the direction of the charge current can be reversed by pushing the levels across the fermi energy. a spin current arises when a magnetic field is applied on the quantum dot to split the two degenerate levels, and it can be reversed by reversing the applied magnetic field. the increase of temperature enhances these currents in certain parameter intervals and decreases them in other intervals. we can explain this interesting phenomenon in terms of the shrinkage of the superconducting gap and the concepts of photon-sideband and photon-assisted processes. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8938]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang M,Li SS. Device for charge- and spin-pumped current generation with temperature-induced enhancement[J]. physical review b,2004,70(19):art.no.195341. |
| APA | Yang M,&Li SS.(2004).Device for charge- and spin-pumped current generation with temperature-induced enhancement.physical review b,70(19),art.no.195341. |
| MLA | Yang M,et al."Device for charge- and spin-pumped current generation with temperature-induced enhancement".physical review b 70.19(2004):art.no.195341. |
入库方式： OAI收割
来源：半导体研究所
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