中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Dislocation dynamics of strain relaxation in epitaxial layers

文献类型:期刊论文

作者Wang ZQ(王自强); Zhang YW(张永伟); Chua SJ
刊名Journal of Applied Physics
出版日期2001
卷号89期号:11页码:6069-6072
ISSN号0021-8979
通讯作者Wang, TC (reprint author), Chinese Acad Sci, Inst Mech, LNM, Beijing 100080, Peoples R China.
中文摘要Many experimental observations have clearly shown that dislocation interaction plays a crucial role in the kinetics of strain relaxation in epitaxial thin films. A set of evolution equations are presented in this article. The key feature of the equations
学科主题力学
类目[WOS]Physics, Applied
研究领域[WOS]Physics
关键词[WOS]HETEROSTRUCTURES ; THICKNESS ; KINETICS ; SI
收录类别SCI
语种英语
WOS记录号WOS:000169149900030
公开日期2007-06-15
源URL[http://dspace.imech.ac.cn/handle/311007/15957]  
专题力学研究所_力学所知识产出(1956-2008)
推荐引用方式
GB/T 7714
Wang ZQ,Zhang YW,Chua SJ. Dislocation dynamics of strain relaxation in epitaxial layers[J]. Journal of Applied Physics,2001,89(11):6069-6072.
APA 王自强,张永伟,&Chua SJ.(2001).Dislocation dynamics of strain relaxation in epitaxial layers.Journal of Applied Physics,89(11),6069-6072.
MLA 王自强,et al."Dislocation dynamics of strain relaxation in epitaxial layers".Journal of Applied Physics 89.11(2001):6069-6072.

入库方式: OAI收割

来源:力学研究所

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