Dislocation dynamics of strain relaxation in epitaxial layers
文献类型:期刊论文
作者 | Wang ZQ(王自强)![]() |
刊名 | Journal of Applied Physics
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出版日期 | 2001 |
卷号 | 89期号:11页码:6069-6072 |
ISSN号 | 0021-8979 |
通讯作者 | Wang, TC (reprint author), Chinese Acad Sci, Inst Mech, LNM, Beijing 100080, Peoples R China. |
中文摘要 | Many experimental observations have clearly shown that dislocation interaction plays a crucial role in the kinetics of strain relaxation in epitaxial thin films. A set of evolution equations are presented in this article. The key feature of the equations |
学科主题 | 力学 |
类目[WOS] | Physics, Applied |
研究领域[WOS] | Physics |
关键词[WOS] | HETEROSTRUCTURES ; THICKNESS ; KINETICS ; SI |
收录类别 | SCI |
语种 | 英语 |
WOS记录号 | WOS:000169149900030 |
公开日期 | 2007-06-15 |
源URL | [http://dspace.imech.ac.cn/handle/311007/15957] ![]() |
专题 | 力学研究所_力学所知识产出(1956-2008) |
推荐引用方式 GB/T 7714 | Wang ZQ,Zhang YW,Chua SJ. Dislocation dynamics of strain relaxation in epitaxial layers[J]. Journal of Applied Physics,2001,89(11):6069-6072. |
APA | 王自强,张永伟,&Chua SJ.(2001).Dislocation dynamics of strain relaxation in epitaxial layers.Journal of Applied Physics,89(11),6069-6072. |
MLA | 王自强,et al."Dislocation dynamics of strain relaxation in epitaxial layers".Journal of Applied Physics 89.11(2001):6069-6072. |
入库方式: OAI收割
来源:力学研究所
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