Photo-capacitance response of internal tunnelling coupling in quantum-dot-imbedded heterostructures under selective photo-excitation
文献类型：期刊论文
| 作者 | Li, GR ; Zhou, X ; Yang, FH ; Tan, PH ; Zheng, HZ ; Zeng, YP |
| 刊名 | journal of physics-condensed matter
 |
| 出版日期 | 2004 |
| 卷号 | 16期号:36页码:6519-6525 |
| 关键词 | ELECTRON GROUND-STATES |
| ISSN号 | 0953-8984 |
| 通讯作者 | li, gr, chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china. |
| 中文摘要 | under selective photo-excitation, the capacitance response of internal tunnelling coupling in quantum-dots-imbedded heterostructures is studied to clarify the electronic states and the number densities of electrons filling in the quantum dots (qds). the random nature for both optical transitions and the filling in a qd assembly makes highly resolved capacitance peaks appear in the c-v characteristic after turning off the photo-excitation. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-17 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/8944]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li, GR,Zhou, X,Yang, FH,et al. Photo-capacitance response of internal tunnelling coupling in quantum-dot-imbedded heterostructures under selective photo-excitation[J]. journal of physics-condensed matter,2004,16(36):6519-6525. |
| APA | Li, GR,Zhou, X,Yang, FH,Tan, PH,Zheng, HZ,&Zeng, YP.(2004).Photo-capacitance response of internal tunnelling coupling in quantum-dot-imbedded heterostructures under selective photo-excitation.journal of physics-condensed matter,16(36),6519-6525. |
| MLA | Li, GR,et al."Photo-capacitance response of internal tunnelling coupling in quantum-dot-imbedded heterostructures under selective photo-excitation".journal of physics-condensed matter 16.36(2004):6519-6525. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。