Band gap narrowing in heavily B doped Si1-xGex strained layers
文献类型：期刊论文
| 作者 | Yao F (Yao Fei) ; Xue CL (Xue Chun-Lai) ; Cheng BW (Cheng Bu-Wen) ; Wang QM (Wang Qi-Ming) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:11页码:6654-6659 |
| 关键词 | SiGe layer |
| ISSN号 | issn: 1000-3290 |
| 通讯作者 | yao, f, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. 电子邮箱地址: sindy-yf@semi.ac.cn |
| 中文摘要 | this paper presents a comprehensive study of the effect of heavy b doping and strain in si1-xgex strained layers. on the one hand, bandgap narrowing (bgn) will be generated due to the heavy doping, on the other hand, the dopant boron causes shrinkage in the lattice constant of sige materials, thus will compensate for part of the strain. taking the strain compensation of b into account for the first time and uesing the with semi-empirical method, the jain-roulston model is modified. and the real bgn distributed between the conduction and valence bands is calculated, which is important for the accurate design of sige hbts. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9190]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yao F ,Xue CL ,Cheng BW ,et al. Band gap narrowing in heavily B doped Si1-xGex strained layers[J]. acta physica sinica,2007,56(11):6654-6659. |
| APA | Yao F ,Xue CL ,Cheng BW ,&Wang QM .(2007).Band gap narrowing in heavily B doped Si1-xGex strained layers.acta physica sinica,56(11),6654-6659. |
| MLA | Yao F ,et al."Band gap narrowing in heavily B doped Si1-xGex strained layers".acta physica sinica 56.11(2007):6654-6659. |
入库方式： OAI收割
来源：半导体研究所
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