Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Wang XY (Wang, Xiaoyan) ; Wang XL (Wang, Xiaoliang) ; Hu GX (Hu, Guoxin) ; Wang BZ (Wang, Baozhu) ; Ma ZY (Ma, Zhiyong) ; Xiao HL (Xiao, Hongling) ; Wang CM (Wang, Cuimei) ; Ran JX (Ran, Junxue) ; Li JP (Li, Jianping) |
| 刊名 | microelectronics journal
 |
| 出版日期 | 2007 |
| 卷号 | 38期号:8-9页码:838-841 |
| 关键词 | AlxGa1-xN |
| ISSN号 | issn: 0026-2692 |
| 通讯作者 | wang, xy, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: xywang@mail.semi.ac.cn |
| 中文摘要 | the epitaxial growth of alxga1-xn film with high al content by metalorganic chemical vapor deposition (mocvd) has been accomplished. the resulting al content was determined to be 54% by high resolution x-ray diffraction (hrxrd) and vegard's law. the full width at half maximum (fwhm) of the algan (0002) hrxrd rocking curve was about 597 arcsec. atomic force microscopy (afm) image showed a relatively rough surface with grain-like islands, mainly coming from the low surface mobility of adsorbed alspecies. from transmittance measurement, the cut-off wavelength was around 280 nm and fabry-perot fringes were clearly visible in the transmission region. cathodoluminescence (cl) measurement indicated that there existed a uniformity in the growth direction and a non-uniformity in the lateral direction. (c) 2007 elsevier ltd. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9202]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang XY ,Wang XL ,Hu GX ,et al. Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition[J]. microelectronics journal,2007,38(8-9):838-841. |
| APA | Wang XY .,Wang XL .,Hu GX .,Wang BZ .,Ma ZY .,...&Li JP .(2007).Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition.microelectronics journal,38(8-9),838-841. |
| MLA | Wang XY ,et al."Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition".microelectronics journal 38.8-9(2007):838-841. |
入库方式： OAI收割
来源：半导体研究所
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