Field emission mechanism from a single-layer ultra-thin semiconductor film cathode
文献类型：期刊论文
| 作者 | Duan ZQ (Duan, Zhi-Qiang) ; Wang RZ (Wang, Ru-Zhi) ; Yuan RY (Yuan, Rui-Yang) ; Yang W (Yang, Wei) ; Wang B (Wang, Bo) ; Yan H (Yan, Hui) |
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2007 |
| 卷号 | 40期号:19页码:5828-5832 |
| 关键词 | AMORPHOUS-CARBON FILMS |
| ISSN号 | issn: 0022-3727 |
| 通讯作者 | wang, rz, beijing univ technol, coll mat sci & engn, lab thin film mat, beijing 100022, peoples r china. 电子邮箱地址: wrz@bjut.edu.cn ; hyan@bjut.edu.cn |
| 中文摘要 | field emission (fe) from a single-layer ultra-thin semiconductor film cathode (susc) on a metal substrate has been investigated theoretically. the self-consistent quantum fe model is developed by synthetically considering the energy band bending and electron scattering. as a typical example, we calculate the fe properties of ultra-thin a1n film with an adjustable film thickness from 1 to 10 nm. the calculated results show that the fe characteristic is evidently modulated by varying the film thickness, and there is an optimum thickness of about 3 nm. furthermore, a four-step fe mechanism is suggested such that the distinct fe current of a susc is rooted in the thickness sensitivity of its quantum structure, and the optimum fe properties of the susc should be attributed to the change in the effective potential combined with the attenuation of electron scattering. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9206]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Duan ZQ ,Wang RZ ,Yuan RY ,et al. Field emission mechanism from a single-layer ultra-thin semiconductor film cathode[J]. journal of physics d-applied physics,2007,40(19):5828-5832. |
| APA | Duan ZQ ,Wang RZ ,Yuan RY ,Yang W ,Wang B ,&Yan H .(2007).Field emission mechanism from a single-layer ultra-thin semiconductor film cathode.journal of physics d-applied physics,40(19),5828-5832. |
| MLA | Duan ZQ ,et al."Field emission mechanism from a single-layer ultra-thin semiconductor film cathode".journal of physics d-applied physics 40.19(2007):5828-5832. |
入库方式： OAI收割
来源：半导体研究所
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