MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates
文献类型：期刊论文
| 作者 | Hao RT (Hao Ruiting) ; Xu YQ (Xu Yingqiang) ; Zhou ZQ (Zhou Zhiqiang) ; Ren ZW (Ren Zhengwei) ; Ni HQ (Ni Haiqiao) ; He ZH (He Zhenhong) ; Niu ZC (Niu Zhichuan) |
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2007 |
| 卷号 | 40期号:21页码:6690-6693 |
| 关键词 | MOLECULAR-BEAM EPITAXY |
| ISSN号 | issn: 0022-3727 |
| 通讯作者 | niu, zc, chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china. 电子邮箱地址: zcniu@red.semi.ac.cn |
| 中文摘要 | first, gasb epilayers were grown on (001) gaas substrates by molecular beam epitaxy. we determined that the gasb layers had very smooth surfaces using atomic force microscopy. then, very short period inas/ gasb superlattices (sls) were grown on the gasb buffer layer. the optical and crystalline properties of the superlattices were studied by low-temperature photoluminescence spectra and high resolution transition electron microscopy. in order to determine the interface of sls, the samples were tested by raman-scattering spectra at room temperature. results indicated that the peak wavelength of sls with clear interfaces and integrated periods is between 2.0 and 2.6 mu m. the sl interface between inas and gasb is insb-like. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9212]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hao RT ,Xu YQ ,Zhou ZQ ,et al. MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates[J]. journal of physics d-applied physics,2007,40(21):6690-6693. |
| APA | Hao RT .,Xu YQ .,Zhou ZQ .,Ren ZW .,Ni HQ .,...&Niu ZC .(2007).MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates.journal of physics d-applied physics,40(21),6690-6693. |
| MLA | Hao RT ,et al."MBE growth of very short period InAs/GaSb type-II superlattices on (001) GaAs substrates".journal of physics d-applied physics 40.21(2007):6690-6693. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。