Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures
文献类型：期刊论文
| 作者 | Zhao J (Zhao, Jianzhi) ; Lin Z (Lin, Zhaojun) ; Corrigan TD (Corrigan, Timothy D.) ; Wang Z (Wang, Zhen) ; You Z (You, Zhidong) ; Wang Z (Wang, Zhanguo) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 91期号:17页码:art.no.173507 |
| 关键词 | FIELD-EFFECT TRANSISTORS |
| ISSN号 | issn: 0003-6951 |
| 通讯作者 | zhao, j, shandong univ, sch phys & microelect, jinan 250100, peoples r china. 电子邮箱地址: linzj@sdu.edu.cn |
| 中文摘要 | using the measured capacitance- voltage curves of ni schottky contacts with different areas on strained algan/ gan heterostructures and the current- voltage characteristics for the algan/ gan heterostructure field- effect transistors at low drain- source voltage, we found that the two- dimensional electron gas (2deg) electron mobility increased as the ni schottky contact area increased. when the gate bias increased from negative to positive, the 2deg electron mobility for the samples increased monotonically except for the sample with the largest ni schottky contact area. a new scattering mechanism is proposed, which is based on the polarization coulomb field scattering related to the strain variation of the algan barrier layer. (c) 2007 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9214]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao J ,Lin Z ,Corrigan TD ,et al. Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures[J]. applied physics letters,2007,91(17):art.no.173507. |
| APA | Zhao J ,Lin Z ,Corrigan TD ,Wang Z ,You Z ,&Wang Z .(2007).Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures.applied physics letters,91(17),art.no.173507. |
| MLA | Zhao J ,et al."Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures".applied physics letters 91.17(2007):art.no.173507. |
入库方式： OAI收割
来源：半导体研究所
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