Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode
文献类型：期刊论文
| 作者 | Yang Z (Yang Zhi) ; Chang B (Chang Benkang) ; Zou J (Zou Jijun) ; Qiao J (Qiao Jianliang) ; Gao P (Gao Pin) ; Zeng Y (Zeng Yiping) ; Li H (Li Hui) |
| 刊名 | applied optics
 |
| 出版日期 | 2007 |
| 卷号 | 46期号:28页码:7035-7039 |
| 关键词 | ACTIVATED GAAS |
| ISSN号 | issn: 0003-6935 |
| 通讯作者 | chang, b, nanjing inst sci & technol, inst elect engn & optpelect technol, nanjing 210094, jiangsu, peoples r china. 电子邮箱地址: bkchang@mail.njust.edu.cn |
| 中文摘要 | we compared two reflection-mode negative electron affinity (nea) gaas photocathode samples that are grown by molecular beam epitaxy with p-type beryllium doping. one sample is uniform doping, and another is gradient doping. experimental curves of spectral response sensitivity and quantum efficiency are obtained. the thicknesses of the two cathodes are both 2.6 mu m. the integrated sensitivity of the uniform doping one is 1966 mu a/lm, and that of the gradient-doping one is 2421 mu a/lm. the escape probability and diffusion length are fitted from the spectral response curves. for the uniform-doping sample, the escape probability is 0.45 and the diffusion length is 5 mu m. for the gradient-doping sample, the escape probability is 0.55 and the diffusion length is 5.5 mu m. (c) 2007 optical society of america. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9216]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang Z ,Chang B ,Zou J ,et al. Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode[J]. applied optics,2007,46(28):7035-7039. |
| APA | Yang Z .,Chang B .,Zou J .,Qiao J .,Gao P .,...&Li H .(2007).Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode.applied optics,46(28),7035-7039. |
| MLA | Yang Z ,et al."Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode".applied optics 46.28(2007):7035-7039. |
入库方式： OAI收割
来源：半导体研究所
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