Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy
文献类型：期刊论文
| 作者 | Zhang RQ (Zhang Riqing) ; Zhang PF (Zhang Panfeng) ; Kang TT (Kang Tingting) ; Fan HB (Fan Haibo) ; Liu XL (Liu Xianglin) ; Yang SY (Yang Shaoyan) ; Wei HY (Wei Hongyuan) ; Zhu QS (Zhu Qinsheng) ; Wang ZG (Wang, Zhanguo) |
| 刊名 | applied physics letters
 |
| 出版日期 | 2007 |
| 卷号 | 91期号:16页码:art.no.162104 |
| 关键词 | INN |
| ISSN号 | issn: 0003-6951 |
| 通讯作者 | zhang, rq, chinese acad sci, inst semicond, key lab semicond mat sci, po box 912, beijing 100083, peoples r china. 电子邮箱地址: zhangriq@semi.ac.cn ; xlliu@red.semi.ac.cn |
| 中文摘要 | the valence band offset (vbo) of the wurtzite inn/zno heterojunction is directly determined by x-ray photoelectron spectroscopy to be 0.82 +/- 0.23 ev. the conduction band offset is deduced from the known vbo value to be 1.85 -/+ 0.23 ev, which indicates a type-i band alignment for inn/zno heterojunction. (c) 2007 american institute of physics. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9220]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang RQ ,Zhang PF ,Kang TT ,et al. Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy[J]. applied physics letters,2007,91(16):art.no.162104. |
| APA | Zhang RQ .,Zhang PF .,Kang TT .,Fan HB .,Liu XL .,...&Wang ZG .(2007).Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy.applied physics letters,91(16),art.no.162104. |
| MLA | Zhang RQ ,et al."Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy".applied physics letters 91.16(2007):art.no.162104. |
入库方式： OAI收割
来源：半导体研究所
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