Photoluminescence degradation in GaN induced by light enhanced surface oxidation
文献类型：期刊论文
| 作者 | Liu WB (Liu Wenbao) ; Sun X (Sun Xian) ; Zhang S (Zhang Shuang) ; Chen J (Chen Jun) ; Wang H (Wang Hui) ; Wang XL (Wang Xiaolan) ; Zhao DG (Zhao Degang) ; Yang H (Yang Hui) |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2007 |
| 卷号 | 102期号:7页码:art.no.076112 |
| 关键词 | GAAS-SURFACES |
| ISSN号 | issn: 0021-8979 |
| 通讯作者 | liu, wb, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. 电子邮箱地址: wbliu@semi.ac.cn |
| 中文摘要 | the exponential degradation of the photoluminescence (pl) intensity at the near-band-gap was observed in heavily doped or low-quality gan with pristine surface under continuous helium-cadmium laser excitation. in doped gan samples, the degradation speed increased with doping concentration. the oxidation of the surface with laser irradiation was confirmed by x-ray photoemission spectroscopy measurements. the oxidation process introduced many oxygen impurities and made an increase of the surface energy band bending implied by the shift of ga 3d binding energy. the reason for pl degradation may lie in that these defect states act as nonradiative centers and/or the increase of the surface barrier height reduces the probability of radiative recombination. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9238]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu WB ,Sun X ,Zhang S ,et al. Photoluminescence degradation in GaN induced by light enhanced surface oxidation[J]. journal of applied physics,2007,102(7):art.no.076112. |
| APA | Liu WB .,Sun X .,Zhang S .,Chen J .,Wang H .,...&Yang H .(2007).Photoluminescence degradation in GaN induced by light enhanced surface oxidation.journal of applied physics,102(7),art.no.076112. |
| MLA | Liu WB ,et al."Photoluminescence degradation in GaN induced by light enhanced surface oxidation".journal of applied physics 102.7(2007):art.no.076112. |
入库方式： OAI收割
来源：半导体研究所
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