Design, fabrication, and characterization of an ultracompact low-loss photonic crystal corner mirror
文献类型：期刊论文
| 作者 | Yu HJ (Yu Hejun) ; Yu JZ (Yu Jinzhong) ; Yu Y (Yu Yude) ; Fan ZC (Fan Zhong-Chao) ; Chen SW (Chen Shaowu) |
| 刊名 | ieee journal of quantum electronics
 |
| 出版日期 | 2007 |
| 卷号 | 43期号:9-10页码:876-883 |
| 关键词 | corner mirror |
| ISSN号 | issn: 0018-9197 |
| 通讯作者 | yu, hj, chinese acad sci, inst semicond, beijing 100083, peoples r china. 电子邮箱地址: yhjun@red.semi.ac.cn |
| 中文摘要 | an ultracompact, low-loss, and broad-band corner mirror, based on photonic crystals, is investigated in this paper. based on the theoretical analysis of the loss mechanism, the boundary layers of the photonic crystal region are revised to improve the extra losses, and the transmission characteristics are evaluated by using the 3-d finite-difference time-domain method. the device with optimized structure was fabricated on silicon-on-insulator substrate by using electron-beam lithography and inductively coupled plasma etching. the measured extra losses are about 1.1 +/- 0.4 db per corner mirror for transverse-electronic polarization for the scanning wavelength range of 1510-1630 nm. dimensions of the achieved pc corner mirror are less than ;7 x 7 mu m(2), which are only about one tenth of conventional wave-guide corner mirrors. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9240]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yu HJ ,Yu JZ ,Yu Y ,et al. Design, fabrication, and characterization of an ultracompact low-loss photonic crystal corner mirror[J]. ieee journal of quantum electronics,2007,43(9-10):876-883. |
| APA | Yu HJ ,Yu JZ ,Yu Y ,Fan ZC ,&Chen SW .(2007).Design, fabrication, and characterization of an ultracompact low-loss photonic crystal corner mirror.ieee journal of quantum electronics,43(9-10),876-883. |
| MLA | Yu HJ ,et al."Design, fabrication, and characterization of an ultracompact low-loss photonic crystal corner mirror".ieee journal of quantum electronics 43.9-10(2007):876-883. |
入库方式： OAI收割
来源：半导体研究所
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