Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density
文献类型：期刊论文
| 作者 | Zheng, ZS (Zheng Zhong-Shan) ; Zhang, EX (Zhang En-Xia) ; Liu, ZL (Liu Zhong-Li) ; Zhang, ZX (Zhang Zheng-Xuan) ; Li, N (Li Ning) ; Li, GH (Li Guo-Hua) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:9页码:5446-5451 |
| 关键词 | SIMOX |
| ISSN号 | issn: 1000-3290 |
| 通讯作者 | zheng, zs, univ jinan, dept phys, jinan 250022, peoples r china. |
| 中文摘要 | in order to obtain greater radiation hardness for simox (separation by implanted oxygen) materials, nitrogen was implanted into simox box (buried oxide). however, it has been found by the c-v technique employed in this work that there is an obvious increase of the fixed positive charge density in the nitrogen-implanted box with a 150 out thickness and 4 x 10(15) cm(-2) nitrogen implantation dose, compared with that unimplanted with nitrogen. on the other hand, for the box layers with a 375 nm thickness and implanted with 2 x 10(15) and 3 x 10(15) cm(-2) nitrogen doses respectively, the increase of the fixed positive charge density induced by implanted nitrogen has not been observed. the post-implantation annealing conditions are identical for all the nitrogen-implanted samples. the increase in fixed positive charge density in the nitrogen-implanted 150 nm box is ascribed to the accumulation of implanted nitrogen near the box/si interface due to the post-implantation annealing process according to sims results. in addition, it has also been found that the fixed positive charge density in initial box is very small. this means simox box has a much lower oxide charge density than thermal sio2 which contains a lot of oxide charges in most cases. |
| 学科主题 | 微电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9260]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zheng, ZS ,Zhang, EX ,Liu, ZL ,et al. Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density[J]. acta physica sinica,2007,56(9):5446-5451. |
| APA | Zheng, ZS ,Zhang, EX ,Liu, ZL ,Zhang, ZX ,Li, N ,&Li, GH .(2007).Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density.acta physica sinica,56(9),5446-5451. |
| MLA | Zheng, ZS ,et al."Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density".acta physica sinica 56.9(2007):5446-5451. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。