Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property
文献类型：期刊论文
| 作者 | Zhao, YW (Zhao You-Wen) ; Miao, SS (Miao Shan-Shan) ; Dong, ZY (Dong Zhi-Yuan) ; Lue, XH (Lue Xiao-Hong) ; Deng, AH (Deng Ai-Hong) ; Yang, J (Yang Jun) ; Wang, B (Wang Bo) |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:9页码:5536-5541 |
| 关键词 | indium phosphide |
| ISSN号 | issn: 1000-3290 |
| 通讯作者 | zhao, yw, chinese acad sci, inst semicond, beijing 100083, peoples r china. |
| 中文摘要 | as-grown fe-doped semi-insulating inp single crystal has been converted into n-type low-resistance material after high temperature annealing. defects in the inp materials have been studied by conventional hall effect measurement, thermally stimulated current spectroscopy, deep level transient spectroscopy and x-ray diffraction respectively. the results indicate that fe atoms in the inp material change from the substitutional to the interstitial sites under thermal activation. consequently, the inp material loses its deep compensation centers which results in the change in types of conduction. the mechanism and cause of the phenomena have been analyzed through comparison of the sites of fe atom occupation and activation in doping, diffusion and ion implantation processes of inp. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9264]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao, YW ,Miao, SS ,Dong, ZY ,et al. Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property[J]. acta physica sinica,2007,56(9):5536-5541. |
| APA | Zhao, YW .,Miao, SS .,Dong, ZY .,Lue, XH .,Deng, AH .,...&Wang, B .(2007).Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property.acta physica sinica,56(9),5536-5541. |
| MLA | Zhao, YW ,et al."Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property".acta physica sinica 56.9(2007):5536-5541. |
入库方式： OAI收割
来源：半导体研究所
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