Effect of interaction between periodic delta-doping in both well and barrier layers on modulation of superlattice band structure
文献类型：期刊论文
| 作者 | Xu, HZ (Xu, Huaizhe) ; Yan, QQ (Yan, Qiqi) ; Wang, TM (Wang, Tianmin) |
| 刊名 | physics letters a
 |
| 出版日期 | 2007 |
| 卷号 | 368期号:3-4页码:324-330 |
| ISSN号 | issn: 0375-9601 |
| 关键词 | energy dispersion relation |
| 通讯作者 | xu, hz, beihang univ, sch sci, beijing 100083, peoples r china. 电子邮箱地址: hzxu@buaa.edu.cn |
| 中文摘要 | the modulation of superlattice band structure via periodic delta-doping in both well and barrier layers have been theoretically investigated, and the importance of interaction between the delta-function potentials in the well layers and those in the barrier layers on sl band structure have been revealed. it is pointed out that the energy dispersion relation eq. (3) given in [g. ihm, s.k. noh, j.i. lee, j.-s. hwang, t.w. kim, phys. rev. b 44 (1991) 6266] is an incomplete one, as the interaction between periodic delta-doping in both well and barrier layers had been overlooked. finally, we have shown numerically that the electron states of a gaas/ga0.7al0.3as superlattice can be altered more efficiently by intelligent tuning the two delta-doping's positions and heights. (c) 2007 elsevier b.v. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9266]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu, HZ ,Yan, QQ ,Wang, TM . Effect of interaction between periodic delta-doping in both well and barrier layers on modulation of superlattice band structure[J]. physics letters a,2007,368(3-4):324-330. |
| APA | Xu, HZ ,Yan, QQ ,&Wang, TM .(2007).Effect of interaction between periodic delta-doping in both well and barrier layers on modulation of superlattice band structure.physics letters a,368(3-4),324-330. |
| MLA | Xu, HZ ,et al."Effect of interaction between periodic delta-doping in both well and barrier layers on modulation of superlattice band structure".physics letters a 368.3-4(2007):324-330. |
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来源：半导体研究所
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