Temperature dependence of absorption edge in MOCVD grown GaN
文献类型：期刊论文
| 作者 | Majid A (Majid Abdul) ; Ali A (Ali Akbar) ; Zhu JJ (Zhu Jianjun) |
| 刊名 | journal of materials science-materials in electronics
 |
| 出版日期 | 2007 |
| 卷号 | 18期号:12页码:1229-1233 |
| ISSN号 | issn: 0957-4522 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION |
| 通讯作者 | ali, a, quaid i azam univ, dept phys, adv mat phys lab, islamabad, pakistan. 电子邮箱地址: aarandhawa@yahoo.com |
| 中文摘要 | we have studied the temperature dependence of absorption edge of gan thin films grown on sapphire substrate by metal-organic chemical vapor deposition using optical absorption spectroscopy. a shift in absorption edge of about 55 mev has been observed in temperature range 273-343 k. we have proposed a theoretical model to find the energy gap from absorption coefficient using alpha = alpha(max) + (alpha(min) - alpha(max))/[1 + exp 2(e - e-g + kt)/kt]. temperature dependence of band gap has also been studied by finding an appropriate theoretical fit to our data using e-g(t) = e-g(273 k) - (8.8 x 10(-4)t(2))/(483 + t) + 0.088 (varshni empirical formula) and e-g(t) = e-g(273 k)-0.231447/[exp(362/t)-1] + 0.082 relations. it has been found that data can be fitted accurately after adding a factor similar to 0.08 in above equations. debye temperature (483 k) and einstein temperature (362 k) in the respective equations are found mutually in good agreement. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-03-29 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/9286]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Majid A ,Ali A ,Zhu JJ . Temperature dependence of absorption edge in MOCVD grown GaN[J]. journal of materials science-materials in electronics,2007,18(12):1229-1233. |
| APA | Majid A ,Ali A ,&Zhu JJ .(2007).Temperature dependence of absorption edge in MOCVD grown GaN.journal of materials science-materials in electronics,18(12),1229-1233. |
| MLA | Majid A ,et al."Temperature dependence of absorption edge in MOCVD grown GaN".journal of materials science-materials in electronics 18.12(2007):1229-1233. |
入库方式： OAI收割
来源：半导体研究所
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